China's CXMT Enters Global DRAM Elite With 11.95nm Node, No EUV Required
ChangXin Memory Technologies defies the industry assumption that sub-15nm DRAM requires extreme ultraviolet lithography, mass-producing its fifth-generation platform at an 11.95nm active-area half-pitch—a milestone that reshapes the competitive calculus for Samsung, SK Hynix and Micron in the world's largest memory market.